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filingDate 1998-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a9992320b93c77890918c9187f972f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e6baddfd0571cdd6f75cad3703f0f84
publicationDate 2003-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-533452-B
titleOfInvention Manufacturing device and method of semiconductor device
abstract This invention discloses a method of manufacturing a semiconductor device that has an amorphous-silicon film onto which hemispherical grains are grown, which comprises first cleaning a silicon wafer at an elevated temperature using ammonia hydrogen peroxide water solution; next cleaning the silicon wafer at an elevated temperature using chlorine hydrogen peroxide water solution; then immersing the silicon wafer in dilute hydrofluoric acid solution; afterwards, rinsing the silicon wafer with pure water; next drying the amorphous-silicon film surface of the wafer by using isopropyl alcohol.
priorityDate 1997-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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