| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2001-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_245f977473ace89f1d28f6104b3917db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90f3744d549fbe22f0ab7b747038072a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffa2c89663439b735d3c6db2119186a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bee5cd3164ee36333fb64934170f900c |
| publicationDate |
2003-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-529169-B |
| titleOfInvention |
Nonvolatile semiconductor storage device and method for manufacturing the same |
| abstract |
Purpose of the present invention is to lower the operating voltage of a nonvolatile semiconductor storage device and/or to increase the operating speed of the device by improving the charge holding characteristic of the device and, in addition, to suppress the secular changes of the characteristics of the device. This nonvolatile semiconductor storage device contains a charge storing layer CS having charge holding ability and has a plurality of dielectric films laminated upon the active area of a semiconductor SUB and an electrode G provided on the dielectric films. The charge storing layer CS includes a first nitride film CS1 composed of silicon nitride or silicon oxynitride and a second nitride film CS2 composed of silicon nitride or silicon oxynitride having a higher charge trapping density than the first nitride film CS1 has. |
| priorityDate |
2000-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |