http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-529084-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b08374cf0cad9c6f3b663da00787c13 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 |
| filingDate | 2000-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4026e21916c311b95d40be7b9569a9e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36d07403ee122d2c99530b7c34a15ee8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6c3e7e52e7a0792c242b4653b9fd5a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a774bccd60c85665a2339c5f9fc6cd1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31a569f2065cecdd848ba53ee94c8902 |
| publicationDate | 2003-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-529084-B |
| titleOfInvention | Epitaxially coated semiconductor wafer and process for producing it |
| abstract | The invention relates to a semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. The semiconductor wafer is characterized by the fact that the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 μm and a maximum density of 0.14 scattered light centers per cm<SP>2</SP>, and the front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 μm x 1 μm reference area. Furthermore, the invention relates to a process for producing the semiconductor wafer. The process comprises the following process steps: (a) as a single polishing step, simultaneous polishing of the front surface and of the rear surface of the semiconductor wafer between rotating polishing plates while an alkaline polishing sol is being supplied, the semiconductor wafer lying in a cutout in a carrier whose thickness is dimensioned to be 2 to 20 μm less than the thickness of the semiconductor wafer after the latter has been polished; (b) simultaneous treatment of the front surface and of the back surface of the semiconductor wafer between rotating polishing plates while a liquid containing at least one polyhydric alcohol having 2 to 6 carbon atoms is being supplied; (c) cleaning and drying of the semiconductor wafer; and (d) deposition of the epitaxial layer on the front surface of the semiconductor wafer produced in accordance with steps (a) to (c). |
| priorityDate | 1999-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.