http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-527697-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_506c189b8955c1062617cdd37153866b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a43be0f80050d452bbc761d744f2def2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e01c3b1179b67dd8b491f0de821656df |
| publicationDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-527697-B |
| titleOfInvention | Aluminum interconnection formation method |
| abstract | An aluminum interconnection formation method comprises the following steps. First, after depositing a metal dielectric layer and defining the dielectric layer opening, a pre-clean method is used to remove the remained oxide on the opening bottom. Then, selective CVD is performed by using DMAH as liquid material to deposit aluminum under a 2 to 5 torr and 200 to 220 degree of centigrade environment. Further, a titanium layer is deposited via PVD method and then a PVD aluminum layer is deposited. This aluminum interconnection process can prevent the damage of the aluminum dielectric layer opening resulting from the PR pattern misalignment. Besides, the resistance of the aluminum interconnection is also reduced. |
| priorityDate | 1998-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.