http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-526587-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2002-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34835a914b48abe333292be7c00ef1e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15323179f0f076659311c8e7b850d476 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc2ae7396751b004aad915895a53e41d |
| publicationDate | 2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-526587-B |
| titleOfInvention | Method for manufacturing shallow trench isolation |
| abstract | A method for manufacturing a shallow trench isolation (STI) is provided with an oxide layer deposited in a STI opening, an extra-thin hard mask layer and a photoresist layer formed on the oxide layer in turn, and a plurality of tops and the hard mask layer formed on the oxide layer, to improve the planarization effect without using an oxide dielectric-layer reverse-tone photo mask (ODR Photo Mask), wherein the dimensions of active areas (AAs) exposed by using the present invention are smaller than those even unable to be exposed by the ODR photo mask. The present invention does not use the technique that has to expose AAs by utilizing a photoresist layer formed by the pattern of the ODR photo mask, and increases the amount of chemical mechanical polishing windows (CMP Windows) to improve the CMP planarization by decreasing amount of the oxide layer with large surface on the substrate. |
| priorityDate | 2002-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.