http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-526356-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1995-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed6bceff57c70f142109fa19fdf51f2b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e650b17c90783404021238e6dcae0a9 |
| publicationDate | 2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-526356-B |
| titleOfInvention | Liquid-crystal display with inter-line short-circuit preventive function |
| abstract | In a liquid-crystal display, a gate line and a gate electrode for a thin film transistor, and constituting a part of the gate line, are formed to be narrower than the line width of an insulating layer disposed below them. A distance from the gate line and the gate electrode to a source electrode and a drain electrode for the thin film transistor, as well as a pixel electrode and a drain line disposed below the insulating layer, is increased by a difference between the line widths of the gate line and the gate electrode and the line width of the insulating layer. Thus, the possibility of a short-circuit occurring between the gate line and the gate electrode due to hillocks is lowered. Further, the line widths of the gate line and the gate electrode are adjusted by adjusting the etching quantity of the side faces of the gate line and the gate electrode. At least one of the drain lines, gate lines, pixel electrodes, source electrodes, drain electrodes and gate electrodes is made of an aluminum alloy containing a small amount of neodymium (Nd). |
| priorityDate | 1994-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.