| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D315-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D315-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F32-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D307-33 |
| filingDate |
2001-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bffa4a732672dd927e60534c6ed14fee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80ef552c51996da668b98c65da511d09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0add81bb44226ce3a7adcf9dd82631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_798136e28319bd53c3abbd373c6117bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be320ab77e8e1113b2306ca0a89a14 |
| publicationDate |
2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-526198-B |
| titleOfInvention |
Novel lactone compounds having alicyclic structure and their manufacturing method |
| abstract |
This invention discloses novel lactone compounds of formula (1), in which k is 0 or 1 and m is an integer satisfying 1 ≤ m ≤ 8. The resist composition formulated using the polymer resulting from polymerization of the inventive lactone compound lends itself to micropatterning with electron beams or far UV rays since it is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance. Especially because of the minimized absorption at the exposure wavelength of an ArF or KrF excimer laser and firm adhesion to the substrate, a finely defined pattern perpendicular to the substrate can easily be formed; the resist composition is thus suitable as micropatterning material for VLSI fabrication. |
| priorityDate |
2000-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |