| abstract |
An ester compound of formula (1) is provided. (R1 is H or methyl, R2 is tertiary C4-20 alkyl, and k=0 or 1). A photoresist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is very suited for micropatterning using electron beams or deep-UV. Especially because of the minimized absorption at the exposure wavelength of an ArF or KrF excimer laser and firm adhesion to the substrate, a finely defined pattern having sidewalls perpendicular to the substrate can easily be formed. The resist composition is thus suitable as micropatterning material for VLSI fabrication. |