http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-523813-B
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_87332c5c360c7292682303ef910f2d0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5abe85db901673cb7fcdbadeb46f301f |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H6-00 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H6-00 |
filingDate | 2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2003-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef8c87b1806aedbcd9883a97458fa809 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c4742de5ff0cedeb415b1db806dcb8a |
publicationDate | 2003-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-523813-B |
titleOfInvention | Radiation-enhanced particle beams and related applications |
abstract | Accelerators and implanters of nowadays are simply wasting too much energy on excitation of lattice electrons, rather than using energy on the desired nuclear scatterings. This invention suppresses the undesired electronic stopping loss via causing effective neutralizing screening of the particles during their penetration through the target, using parallel speedy conduction electrons induced by assistant radiations. The assistant radiation beam of this invention can take the form of energetic electrons, X ray or γ ray, for example. One great advantage of the current invention is to further expand the application domains of existing accelerators and implanters, using readily available, relatively cheap and easy-to-implement radiation sources. The then saved particle energy will be redirected to reaching more depth or to rendering more defects within the target as desired. This invention is expected to bring great impacts on various application domains. In particular, it can greatly facilitate the electrical isolation among mixed-mode microelectronic integrated circuits, such as those on the system-on-a-chip (SOC), and bring to reality high-Q IC inductors on Si. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I480892-B |
priorityDate | 2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.