| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-945
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-53022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1004 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0334 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-70 |
| filingDate |
2001-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e43524542f608db5a27bad8660876465 |
| publicationDate |
2003-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-523805-B |
| titleOfInvention |
Mask for evaluating selective epitaxial growth process |
| abstract |
Disclosed is a mask for evaluating selective epitaxial growth process. The disclosed mask comprises a mask pattern for resistance measurement to measure sheet resistance of grown signal crystal silicon in a first area, a mask pattern for selectivity evaluation to evaluate selectivity of signal crystal silicon growth in a second area diagonal to the first area, mask patterns for facet generation evaluation, having different shapes, to evaluate facet generation of grown signal crystal silicon in a third area, mask patterns for loading effect evaluation, having different shapes, to evaluate growth of signal crystal silicon by loading effect in the upper part of a fourth area and a mask pattern for uniformity evaluation to evaluate uniformity of growth signal crystal silicon in the lower part of the pattern for loading effect evaluation in the fourth area. |
| priorityDate |
2001-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |