http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-520528-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 2001-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_033f4c46ba8b2b4f484e119f762f32ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8882990e38ffebaca2047341cad402ef
publicationDate 2003-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-520528-B
titleOfInvention Method for eliminating corner round profile of the RELACS process
abstract Forming a patterned photoresist over a substrate, herein numerous ions are formed during the formation of the patterned photoresist. Treat the patterned photoresist to increase the ions density at the top of the patterned photoresist. Cover the patterned photoresist by a reactive layer, wherein the reaction between the reactive layer and the ions forms a crosslinked layer over the patterned photoresist. Remove non-crosslinked portions of the reactive layer. The treatment could be thermal treatment and/or illumination, and could be performed after the reactive layer is covered.
priorityDate 2001-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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