http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-519743-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate | 2001-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6eb300ad7ebfe3713ef36741348fa73 |
| publicationDate | 2003-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-519743-B |
| titleOfInvention | Method for forming silicide |
| abstract | A method for forming a silicide comprises: providing a substrate where the surface thereof is covered by an uneven semiconductor structure; forming a silicon layer on the semiconductor structure in which the profiles of the silicon layer and the semiconductor structure are substantially equivalent; using an etching process to treat the silicon layer so that the profile of the silicon layer is smoother than the profile of the semiconductor structure; forming a metal layer on the silicon layer; and performing a thermal treatment to react the metal layer with the silicon layer to form silicide layer which is used as a silicide wire. Through a partial modification, the invented method comprises: providing a substrate having an uneven first surface; using an etching process to treat the substrate so that the substrate has a second surface having a smoother profile than the first surface; forming a silicon layer on the second surface where the profiles of the silicon layer and the second surface are substantially equivalent; and forming a metal layer on the silicon layer. |
| priorityDate | 2001-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.