http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-519648-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C15-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C15-043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C15-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
filingDate | 2001-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2003-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b002b99ed10b5bab940e9990c9e44706 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8097c49b552e1305f62e7194b5659e58 |
publicationDate | 2003-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-519648-B |
titleOfInvention | Semiconductor device with memory and logic cells |
abstract | A semiconductor device has a plurality of basic units formed on a semiconductor substrate, each including a memory element and a logic element and having the same or bilateral symmetry structure. Each basic unit has a DRAM cell formed in a first active region, serially connected transistors of a logic element formed in a second active region and having second and third gate electrodes and source/drain regions with silicide layers, first and second signal lines connected to the source/drain regions of the transistor pair, a third signal line connected to the second gate electrode, and a conductive connection terminal formed under the storage electrode of a DRAM capacitor for connecting the storage electrode and third gate electrode. A semiconductor device is provided which has a plurality of basic units each including a memory cell and a logic cell formed on the same semiconductor substrate, the device being easy to manufacture and capable of high integration. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I618079-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I608486-B |
priorityDate | 2000-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.