| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate |
1999-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f9e1fefb1485250c97965b50bb12570
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929ed6d91d6e365926a4f92dda0ff987
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7e79a37ad7b640f7698017e31dbcff1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83710d4f17d3b027d5bb71b0dbd1b986
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddf82e6cc72df5843de0bfa5176d3fd7 |
| publicationDate |
2003-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-517375-B |
| titleOfInvention |
Nonvolatile semiconductor device and its manufacturing method |
| abstract |
The present invention is related to a nonvolatile semiconductor memory, in which data is electrically rewritable. The memory cell transistor formed inside the device formation region of the semiconductor substrate is provided with the source/drain diffusion layer and the gate structure which contains the gate insulation film formed on the device formation region, the floating gate, the inter-gate insulation film and the control gate. In addition, a barrier insulating film for suppressing excessive etching is formed except the region near the gate electrode structure. |
| priorityDate |
1998-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |