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filingDate 2001-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bed702d5a4d1e1e9e095808b737ef89
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publicationDate 2003-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-516112-B
titleOfInvention Photomask and its manufacturing method, forming method of pattern, and manufacturing method of semiconductor device
abstract The subject of the present invention is to develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured with low cost. The solving means of the invention is described in the following. A shade pattern 2 of a photomask M is constituted by a photoresist film containing micro-particles such as carbon in an organic film. A pattern is transferred to the photoresist 6 on a semiconductor wafer 5 by means of the reducing projection exposure treatment of the photomask M. When performing the exposure treatment, it is possible to select exposure light within a range of wide wavelengths including I-line, KrF excimer laser beam and ArF excimer laser beam.
priorityDate 2000-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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