| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2001-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac8db1f32e82c9aa09e729832dbd073c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8edf07a778936968eeb92c1d886797fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5791a700c55bfe52df5f23842668fd91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_917b3f640e27386368e628e343f3d19c |
| publicationDate |
2002-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-515098-B |
| titleOfInvention |
Heterojunction tunneling diodes and process for fabricating the same |
| abstract |
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I562398-B |
| priorityDate |
2000-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |