http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-512465-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2033-0095 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 |
| filingDate | 2001-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2c37905204a14b0a5312e2ae4752ad9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_194afecd4f0b8b3fdd52fcd12f7164fd |
| publicationDate | 2002-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-512465-B |
| titleOfInvention | wafer, method for determining production conditions of silicon single crystal and method for producing silicon wafer |
| abstract | This invention relates to a silicon wafer having no epitaxial layer thereon and including 0.24 or less pieces/cm<SP>2</SP> of LSTDs present in the surface layer portion of the silicon wafer and having a size of 50 nm or more; a method for determining a condition under which a silicon single crystal is produced on the basis of the correlation among the judgment whether a silicon single wafer is acceptable or not made on the basis of predetermined characteristics of the silicon single crystal wafer produced by pulling up a silicon single crystal doped with nitrogen by the Czochralski method while varying the V/G and/or the PT, fabricating a wafer from the single crystal, and heat-treating the wafer, the V/G, and/or the PT; and a method for producing a silicon wafer by predetermining the concentrations of nitrogen and oxygen in a silicon single crystal and a condition under which the silicon wafer to be produced is heat-treated, and pulling up the silicon single crystal in the range of the V/G lower than that of the silicon single crystal uniquely defined when the defect density of the wafer is determined to a predetermined value and in the range of the PT shorter than that of the silicon single crystal also uniquely defined when the defect density of the wafer is determined to a predetermined value, thus producing a nitrogen-doped annealed wafer having a low defect density even measured under strict conditions and having a less variation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I805242-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113009075-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113009075-B |
| priorityDate | 2000-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.