Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F2200-294 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03D7-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-157 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 |
filingDate |
2001-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2002-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_197328e8552a361895bb7c251e590d85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2544f8710182699dd2a1caea3485d4bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c26ca663a6580decbbc43bdf4740b47b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cdc1728073cfffc7d7a6f8f6c4c2193 |
publicationDate |
2002-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-511166-B |
titleOfInvention |
Equipment for communication system and semiconductor integrated circuit device |
abstract |
Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of δ-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of δ-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the δ-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained. |
priorityDate |
2000-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |