http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-510033-B

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-28
filingDate 2001-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59c1caca9b82152db81c12ae97a033a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb6d2b2bfae41165c12b0de5b5973f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_581256d0a0bd8cf6c9a31fc94161d3ad
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publicationDate 2002-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-510033-B
titleOfInvention Under bump metallurgy structure and its manufacturing method
abstract The present invention provides an under bump metallurgy structure and its manufacturing method. The under bump metallurgy structure of the present invention is formed by using a first mask to perform a pattern definition on a wetting layer, and then using a second mask to perform a pattern definition on an adhesion layer below the wetting layer, wherein the pattern dimension of the first mask is smaller and the pattern dimension of the second mask must be larger than the cap layer dimension of the under bump metallurgy. Therefore, when etching the adhesion layer, the etchant does not come into touch with cap layer, and thus cannot damage the cap layer, thereby no gap is generated between the adhesion layer and passivation layer below the cap layer. Accordingly, it is able to achieve the object of protecting the cap layer and increasing the manufacturing reliability without using additional material to protect the cap layer.
priorityDate 2001-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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