| abstract |
The present invention includes a step of forming an Ni bump by non-electrolytic plating in an opening of a protecting film having an insulating property formed on an electrode pad which is provided on a semiconductor substrate, and a step of removing a plating solution residue remaining in a gap between the Ni bump and the protecting film. The plating solution residue is removed by cleaning in a cleaning solution containing hydrogen peroxide, or by applying an ultrasonic wave in a cleaning solution such as pure water. |