http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-507276-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02142 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F5-003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-003 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-00 |
| filingDate | 2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aebb8d32cd9f2abd29e71651c3e5ddf |
| publicationDate | 2002-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-507276-B |
| titleOfInvention | Precursors for incorporating nitrogen into a dielectric layer |
| abstract | A metal-organic precursor suitable for use in a chemical vapor deposition formation of dielectric layer (14, 52) is disclosed. The precursor comprises a moiety that includes a first metal atom (202), an oxygen atom, and a nitrogen atom. The oxygen atom is chemically bonded to the metal atom and to the nitrogen atom. The first metal atom (202) may be a group III, group IV, or group V transition metals such as yttrium, lanthanum, titanium, zirconium, hafnium, niobium, and tantalum or another metal such as aluminum. The precursor may include one or more alkoxy groups (208) bonded to the first metal atom (202). The precursor may be characterized as a M(OCR3)x-y-z(ONR2)y(OSiR3)z molecule where Y is an integer from 1 to (X-1), Z is an integer from 0 to X-1, X is an integer from 3 to 5 depending upon the valency of M and (Y+Z) is less than or equal to X. In one embodiment the precursor further includes one or more siloxy (212) or alkyl siloxy (212) groups bonded to the first metal atom (202). The precursor is suitable for chemical vapor deposition process used to deposit a dielectric layer (14, 52) on a semiconductor substrate (10). In this embodiment, the dielectric layer (14, 52) may be intended as a gate dielectric layer (14) or a capacitor dielectric layer (52). |
| priorityDate | 2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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