http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-506065-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1998-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7e925907f46edf7a43ad3e73be8417c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8014c11a62d0fe5281c5cb7c93a49fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc85f86f5af3a50cb6f13bb9cf284429 |
| publicationDate | 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-506065-B |
| titleOfInvention | Manufacture method of shallow trench isolation region |
| abstract | This invention provides a manufacture method of shallow trench isolation region. A pad oxide layer, a silicon nitride layer and a patterned photoresist layer are formed sequentially on a substrate. The patterned photoresist layer is used as a mask to etch the silicon nitride, the pad oxide layer and the substrate sequentially to from a trench in the substrate. Subsequently, a first acid liquid is used to clean the trench and the patterned photoresist layer is removed by plasma and a second acid liquid sequentially to expose the tip at the top of the trench opening. The tip can be removed by a dry isotropic etch to improve the kink effect phenomenon. |
| priorityDate | 1998-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.