| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate |
2001-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d209bbd65cb425a0ef964ece1a6fad85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_857f324bee62621458f09f2ffa14de1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b275807b0a64f30a25ed99bd35f0c7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_284aef6f73aa4f118e6ab6bc6e587118 |
| publicationDate |
2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-505988-B |
| titleOfInvention |
Nitrogen rich film for low-k applications |
| abstract |
A method of depositing a nitrogen rich nitride film, such as a tantalum nitride (TaN) film, which can be used with low-k dielectric films. An initial nitrogen rich layer is achieved by exposing a target to a nitrogen rich atmosphere prior to sputtering the target and deposition of the sputtered target material onto a substrate. Thereafter, the flow of N2 can be controlled during processing to create a desired nitrogen concentration in the film. The nitrogen flow may be held constant during processing, varied during processing, or terminated during processing to control the nitrogen concentration in the layer(s). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I703227-B |
| priorityDate |
2000-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |