http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-505978-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2001-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f505cbc4aad6864a8cc16ac2b60a5d0 |
| publicationDate | 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-505978-B |
| titleOfInvention | Residue-free bi-layer lithographic process |
| abstract | A residue-free bi-layer lithographic process utilizes an anisotropic O2/SO2 plasma etching process as a dry development process, and further utilizes a fluorocarbon gas/oxygen plasma as a de-residue process to remove residues created during the dry etching process. In the present invention, a first resist layer is coated over a substrate and baked later. Then, a second resist layer is coated over the first resist layer. The second resist layer is imagewise exposed and developed to expose a predetermined area within the first resist layer. An anisotropic O2/SO2 plasma dry etching process is performed to remove the predetermined area within the first resist layer. Finally, a de-residue process is performed to remove residues created during the dry etching process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7309871-B2 |
| priorityDate | 2001-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.