http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-504522-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 1999-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28cf13f5ab4082e03fe78c06c426ae49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bbf77768eefc420c3ebbc5de4b64c0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f956cbedb1decfb3790cc7d63114047b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2891e6d120b7321cd14f98ce3566246f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67d536a7816f37c9ecee71ff663a4663 |
| publicationDate | 2002-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-504522-B |
| titleOfInvention | Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus |
| abstract | A methodology is described by which a processing chamber used to deposit plasma-enhanced Ti-CVD films may be conditioned and passivated efficiently after either a wet cleaning (10) or in-situ chemical cleaning (20), or after each successive deposition sequence (40). The technique allows a CVD process, such as, for example, a Ti-PECVD process, to recover film properties, such as resistivity, uniformity, and deposition rate, in a minimum time and following a minimum number of conditioning wafers, thereby improving the productivity of the system. The technique also maintains the stability of the system during continuous operation. This allows for the processing of thousands of wafers between in-situ cleaning of the chamber. Immediately following chamber cleaning and before performing the Ti-CVD process on wafers, the methodology includes forming a plasma with reactive gas to heat reactor components (16, 34), then adding the coating material containing reactant to deposit the coating material onto the reactor components (18), then introducing an oxidizing or reducing gas into the chamber to stabilize the coating on the reactor parts (20), followed by resumption of the wafer coating process (40). During continuous operation (40) in the Ti-CVD of wafers, the methodology includes introducing a mixture of Ar and H2 gases forming a plasma to heat reactor components where necessary (43), then introducing and chemically reducing TiCl4 (44) to deposit Ti on the heated reactor components (45), then introducing oxidizing or reducing gas into the chamber for a period of time necessary to stabilize the Ti film (50). Preferably, N2 and NH3 are introduced and wafer passivation and reactor stabilization are performed simultaneously. Stabilization of the reactor only, and in some cases also the wafer, may use NH3, H2O, O2 or other gases. |
| priorityDate | 1998-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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