http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-499763-B

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filingDate 2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-499763-B
titleOfInvention Semiconductor device having a thin film fieldeffect transistor, liquid crystal display device, and production method thereof
abstract A highly reliable semiconductor device is provided. The semiconductor device is provided with a thin film field-effect transistor having a channel region and includes a substrate and a semiconductor film. The semiconductor film is formed on the substrate and includes the channel region of the thin film field-effect transistor. An upper surface of the semiconductor film is planarized by removing a surface layer of the semiconductor film.
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