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filingDate 2000-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ebbfdaf3046d4a2ed461939c100fa04
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publicationDate 2002-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-497266-B
titleOfInvention Nonvolatile semiconductor memory
abstract The present invention provides a nonvolatile semiconductor memory, in which the data circuit does not become large in size even if multi-level data is used. Data having three values or more is stored in a memory cell in a nonvolatile manner. Data circuit 2 has plural memory circuits. One of the plural memory circuits is a latch circuit LATCH 1. Another one of the plurality of storage circuits is a capacitor DLN(C1). The latch circuit LATCH 1 and the capacitor DLN(C1) are used to temporarily store write-in/read-out data having two bits or more. Data stored inside the capacitor DLN(C1) can be refreshed by using the latch circuit LATCH 1 if data alternation causes a problem.
priorityDate 1999-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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