Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B49-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B49-12 |
filingDate |
1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2002-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f977393f1d6752ddfce1cd8d8d9667ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baece6a9ccc373fdb95a4e22741cc4d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1921ee26b2e5fcaa74603d30ee23ae2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd1eff20686f563ab9b55803b4d60ae6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82d1ad8baf4be152ad127a066b0e403e |
publicationDate |
2002-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-497171-B |
titleOfInvention |
Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing |
abstract |
Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis. |
priorityDate |
1998-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |