| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-05042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01004 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2001-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee4c316737d77418bbbde5dba7b7f712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e6719c9fed20d1fb3747cc6e1890ec4 |
| publicationDate |
2002-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-495990-B |
| titleOfInvention |
Method for making compound semiconductor device |
| abstract |
This invention provides a method for making compound semiconductor device to overcome the problem of frequent break of substrates during bonding because the substrate and a silicon nitride film are hard when a pad structure which is formed by layering a first pad electrode and a second pad electrode on the silicon nitride film is adopted for a compound semiconductor device. In a step for leaving a resist layer 58 on an intended gate electrode 69 and adhering an oxide film 61 on the surface of a source region 56 and a drain region 57 and on the peripheral edge of an intended pad region 59, a pad oxide film 62 is laid under a first pad electrode 70 and the peripheral edge of a second pad electrode 77. In this way, the method for manufacturing the compound semiconductor device by which the pad structure suppressing the spread of the depletion layer at its peripheral edge is realized without increasing the number of manufacturing steps. |
| priorityDate |
2000-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |