| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2216-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2216-08 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
| filingDate |
2000-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0844567b78ff360ccd4ee243aa8d895a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84f5d9766b05806af079aeb3101046db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bc3a5e1e587ea0ffb84e26afe8138af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bf50ae4b521a765f9b2f61faf20b3d7 |
| publicationDate |
2002-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-495987-B |
| titleOfInvention |
Semiconductor integrated circuit and non-volatile memory device |
| abstract |
Semiconductor integrated circuit and non-volatile memory device are introduced. It can enhance the data retention capability of a memory unit that is composed by a pair of differential state non-volatile memory device. The flash memory (130) uses the gate oxide (GT2) and gate (GT2) process of the transistor in the same substrate to form tunnel oxide (GT3) and floating gate (FGT) respectively. The pair of non-volatile memory device composing the memory unit is respectively connected to a pair of complementary data lines and two units are set to be one bit. The threshold voltages of the two memory units are different and are read differentially. When in the read mode, the word line voltage is set to be about equivalent to the threshold voltage in the thermal equivalence state (initial threshold voltage) and in the same time to be about equivalent to the average of high and low threshold voltages. So the data retention performance is persisted and reduces the read failure rate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I418981-B |
| priorityDate |
1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |