| abstract |
The object of the present invention is to prevent rise of resistance due to oxidation of the copper wiring and diffusion of copper. The above object can be attained by the present invention providing a semiconductor device which contains a wire protective film 1 covering the top of the copper wiring 2 formed in the insulation film and a barrier film surrounding the side and bottom of the copper wiring; wherein the wire protective film and/or barrier film is formed with cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and (3) boron, as in the case of other embodiments. |