| abstract |
The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method comprises the steps of forming an underlying insulating film 2 formed of a nitrogen containing insulating film on a substrate 1, forming a porous insulating film 3 on the underlying insulating film 2, forming an opening portion 7a in the underlying insulating film 2 and the porous insulating film 3, and forming a nitrogen containing insulating film 4, 4a on a surface of the porous insulating film 3 and an inner surface of the opening portion 7a by bringing the surface of the porous insulating film 3 and the inner surface of the opening portion 7a into contact with any one gas plasma of ammonia gas, a nitrogen gas, and an oxygen nitride gas. |