http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-492043-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31794 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31791 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 |
| filingDate | 2001-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_574c25e8e8840348ca0195dd2ce40178 |
| publicationDate | 2002-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-492043-B |
| titleOfInvention | Test method of mask for electron-beam exposure and method of electron-beam exposure |
| abstract | The present invention relates to a test method of a mask for electron-beam exposure which has a pattern region in which, by forming an electron-beam scatterer in prescribed shape on an electron-beam transmittable thin film, a scattering region with said electron-beam scatterer and a membrane region without said electron-beam scatterer are formed in prescribed pattern shape; wherein electron-beam irradiation onto a tested mask is carried out in a plurality of times, with each irradiated region subjected to irradiation at a time being scanned with the electron beam, and through detection of transmitted electrons which is made for each irradiated region subjected to irradiation at a time, the value for ITE/Α a given by dividing a cumulative intensity of the value for ITE/Α given by dividing a cumulative intensity of the transmitted electrons ITE for an irradiated region subjected to irradiation at a time by a pattern density Α of a membrane region within said irradiated region is obtained for each one of a plurality of irradiated regions, whereby data of a relative film thickness distribution for the membrane regions in the mask face are acquired. The present invention can provide a test method of a scattering membrane mask for electron-beam exposure wherein, even after mask fabrication, a film thickness distribution of membrane regions thereof can be readily measured as well as a method of electron-beam exposure wherein a pattern can be formed with high linewidth accuracy. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I416576-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I760324-B |
| priorityDate | 2000-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.