http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-486776-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1999-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4568833c63975ec7fbc206442c8fdc03 |
| publicationDate | 2002-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-486776-B |
| titleOfInvention | Formation of laterally diffused metal oxide semiconductor device |
| abstract | This invention provides a method to manufacture high voltage transistors, which comprises the steps of: providing a semiconductor layer with a conductive band; forming an oxide layer on the semiconductor layer; forming a N-type region along the adjacent oxide layer vertically; forming a gate electrode and at least part of the gate electrode covering the top of channel and N-type region; forming a conductive band of the first source/drain region in the semiconductor layer; forming a conductive band of the second source/drain region in the semiconductor layer and using one of the source/drain regions of the N-type region; lightly doping a first dopant concentration on the lightly doped area of a conductive band adjacent to the N-type region and on top surface of the semiconductor; lightly doping a second dopant concentration which is lower than the first dopant concentration on the lightly doped area of the N-type region adjacent to the oxide layer; and finally lightly doping a third dopant concentration which is lower than the second dopant concentration on the lightly doped area of the N-type region deep into the source/drain area. |
| priorityDate | 1999-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.