| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6623826fb005ec2357960fdc6dcc8490 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2001-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fd1298a04fd7cc746bfaa0f08cc118a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c211477fb49a1f6d0017f495367b211f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3584a4de5b5c5c39f002c26f7636286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf3fdd37639b75cfb415d33029273318 |
| publicationDate |
2002-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-483800-B |
| titleOfInvention |
Diamond as a polish-stop layer for chemical-mechanical planarization in a damascene process flow |
| abstract |
A method of using diamond or a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate using a damascene process flow. The diamond or a diamond-like carbon layer is deposited onto the surface of the substrate before patterning the metal level. A protective layer is then deposited over the diamond or diamond-like carbon polish-stop layer, wherein such protective layer may act as an additional polish-stop layer. Together, the diamond or diamond-like carbon polish-stop layer and the protective layer are used as a hard-mask for patterning the trenches that will become the metal features, wherein such protective layer protects the diamond or diamond-like carbon polish-stop layer during the patterning process. After deposition of a conductive metal layer, the dielectric substrate is polished to remove excess conductive material, as well as topography. In the polishing process, the diamond or diamond-like carbon polish-stop layer and any remaining protective layer are used as polish-stop layers. The diamond or diamond-like carbon polish-stop layer allows for an improved planar surface, thereby resulting in an sufficient decrease in topography at the surface of the inter-level dielectric. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103909464-A |
| priorityDate |
2000-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |