http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-480795-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2218 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2001-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92792f7c8caaf1ce615de0987f2ec222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bd1ca14482e65accc1a07afced6645c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f663d17ea85c3b91d7ab7b399b3dd86a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde3b8c20d9004b671c6f439d089b5e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1671f84249c03bac2a89292f9608fd00 |
| publicationDate | 2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-480795-B |
| titleOfInvention | Semiconductor laser light emitting device |
| abstract | Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0 ≤ x ≤ 1.0). In this device, the component ratio ""X"" of Al is specified at a value in a range of 0.3 ≤ x ≤ 1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio ""x"" of Al is specified at a value in a range of 0.15 < x < 0.30, so that the semiconductor laser light emitting device is configured as a weak index type pulsation semiconductor laser light emitting device; or the component ratio ""x"" of Al is specified at a value in a range of 0 ≤ x ≤ 0.15, so that the semiconductor laser light emitting device is configured as a gain guide type laser light emitting device. |
| priorityDate | 2000-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.