http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-478066-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1995-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d51ad03cb12b3ad6df4fee794c00fd19 |
| publicationDate | 2002-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-478066-B |
| titleOfInvention | Method to remove precipitation for tungsten plug manufacture process |
| abstract | This invention provides a manufacture method of tungsten plug for integrated circuit. The traditional manufacture method of tungsten plug is to from a contact hole or via hole, deposit a thick layer of tungsten and carry out anisotropic etch back on the tungsten layer using plasma etch technique to form tungsten plug in the contact hole or via hole. However, because the tungsten layer is very thick, long etch back time is required. The surface of tungsten layer at the center of the contact hole or via hole will gradually have dimple during the long etch back process. As the etch back process finishes, tungsten in the contact hole or via hole is etched away greatly and thus the resulted tungsten plug is not complete or flat. The method of the present invention describes a method to eliminate surface dimple of tungsten by depositing a very thin tungsten layer. |
| priorityDate | 1995-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.