| abstract |
In a flip-chip type semiconductor device, a plurality of pad electrodes (12, 32) are formed on a semiconductor substrate (11, 31). An insulating stress-absorbing resin layer (14, 34, 34') made of thermosetting resin is formed on the semiconductor substrate and has openings (14a, 34a) corresponding to the pad electrodes. A plurality of flexible conductive members (16, 21, 36, 38, 51, 61) are filled in the openings. A plurality of metal bumps (17) are formed on the flexible conductive layers. |