http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-477037-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2000-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28cbce693634de4ae04fa093ff885c7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0d086cda5790a5fd26125d99bb8f54e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e116af66cb4970584b960d74b79f3de |
| publicationDate | 2002-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-477037-B |
| titleOfInvention | Method for forming extension by spacer secondary etching |
| abstract | There is provided a method for forming extension by secondary spacer etching, which comprises: first, providing a substrate for forming a gate structure on the substrate, and forming spacers at two sides of the gate structure; next, using the gate structure and first spacer as a mask to implant a plurality of first ions into the substrate for forming the source/drain area, and etching the first spacer to reduce the width of the spacer thereby forming a second spacer; and finally using the gate structure and second spacer as a mask to implant a plurality of second ions into the substrate to form an extension. |
| priorityDate | 2000-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.