http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-476156-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-119 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2000-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ea9ae0e567299dbb4a9100f81beb824 |
| publicationDate | 2002-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-476156-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | A semiconductor device with a transistor having a first impurity region, a second impurity region, and a gate electrode formed on a semiconductor substrate. The semiconductor device also includes a first insulating film covering the transistor, and a capacitor formed on the first insulating film. The capacitor includes a dielectric film formed of either ferroelectric material or high dielectric material, and an upper electrode and a lower electrode positioned to put the dielectric film therebetween. A second insulating film is formed on the capacitor, and a wiring layer is formed on the second insulating film. A nitride film covers the wiring layer and a first silicon oxide film formed on the nitride film includes nitrogen at least at the surface thereof. |
| priorityDate | 2000-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.