http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-476107-B

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filingDate 2000-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0868c46626567f530d780627ae93d8c
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publicationDate 2002-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-476107-B
titleOfInvention Semiconductor device and method of manufacturing the same
abstract The present invention is aimed to prevent deterioration of the withstand voltage of a PN junction and increase in the resistance of a fine cobalt silicide lead line, which would otherwise be caused by coagulation of cobalt silicide, in the wiring of a semiconductor device having a cobalt silicide layer. A cobalt film is formed on a silicon film laid on a semiconductor substrate, and a wafer is heated to form a Co silicide film. Co which has not reacted with Si is removed. Then, a silicon film is formed on the Co silicide film, and the wafer is heated, to thereby change the Co silicide film to a disilicide film.
priorityDate 1999-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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