http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-475240-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1998-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0477e419cd0022f48b934f61093f34c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e935d4d7f6f022cf9a0c58506f1496b4 |
| publicationDate | 2002-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-475240-B |
| titleOfInvention | Manufacturing method of via hole opening |
| abstract | A manufacturing method of via hole opening is disclosed, which comprises forming a first dielectric layer, a flowing dielectric layer and a second dielectric layer sequentially on a substrate formed thereon a conduction wire; thereafter, forming a photoresist layer on the second dielectric layer, etching the second dielectric layer, the flowing dielectric layer and the first dielectric layer by using the photoresist layer as the mask, so as to form a via hole opening and expose part of the conduction wire; next, removing the photoresist layer by oxygen plasma ashing and solvent removing method, and forming a conformal third dielectric layer on the substrate; then defining this third dielectric layer, forming a spacer on the sidewall of the via hole opening to cover the first dielectric layer, the flowing dielectric layer and the second dielectric layer. |
| priorityDate | 1998-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.