| abstract |
In a semiconductor device such as GaN semiconductor laser having an electrode formed on a nitride III-V compound semiconductor layer containing at least Ga, such as GaN layer, at least a part of the electrode in contact with the nitride III-V compound semiconductor layer is made of a y-GaNi alloy or a y'-GaNi alloy. The electrode is made by first stacking the y-GaNi alloy layer or y'-GaNi alloy layer, or its component elements, on the nitride III-V compound semiconductor layer, and then annealing it at a temperature not lower than 680 DEG C, or by stacking any of them on the nitride-compound III-V compound semiconductor layer heated to a temperature not lower than 680 DEG C. At least a part of the electrode in contact with the nitride III-V compound smiconductor layer may be made of an alloy of Ga and at least one kind of element selected from the group consisting of Pt, Ag, Pd, Mg, Hf, Al, Cr, Ti, Mo, W, Zr, Si and Ge. |