| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3163
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B2005-3996
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3295 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-012 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R33-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-18 |
| filingDate |
2000-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efdf7ef43f6b30b92c9ee3167e554d63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96f006235f1e5a79c9c3eab2e2e01a92 |
| publicationDate |
2002-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-472241-B |
| titleOfInvention |
Trilayer seed layer structure for spin valve sensor |
| abstract |
A trilayer seed layer structure is employed between a first read gap layer and a spin valve sensor for improving the magnetic and giant magnetoresistive properties and the thermal stability. In the spin valve sensor, the trilayer seed layer structure is located between a first read gap layer and a ferromagnetic free layer. The antiferromagnetic pinning layer is preferably nickel manganese (Ni-Mn). The trilayer seed layer structure includes a first seed layer that is a first metallic oxide, a second seed layer that is a second metallic oxide and a third seed layer that is a nonmagnetic metal. A preferred embodiment is a first seed layer of nickel oxide (NiO), a second seed layer of nickel manganese oxide (NiMnOx), and a third seed layer of copper (Cu). |
| priorityDate |
1999-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |