http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-471166-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2001-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_405bcffb73b17b0050f9b0047fba17e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54def2c3656c7b1e69ba1bc4acc8b651 |
| publicationDate | 2002-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-471166-B |
| titleOfInvention | Fabrication method of DRAM deep trench capacitor |
| abstract | The present invention provides a fabrication method of DRAM deep trench capacitor. The method of the present invention is to form a deep trench on the surface of the silicon substrate, form a buried electrode on the bottom of the deep trench in the silicon substrate, then form a silicon nitride layer on the surface of the buried electrode, and proceed an oxidation process, so as to form a first oxidation film and the second oxidation film in the silicon nitride layer of the deep trench and on the surface of the silicon substrate, form a doped polysilicon layer in the deep trench, the surface of the doped polysilicon layer is lower than that of the substrate surface. Finally, remove part of the second oxidation to expose the substrate on the upper half part of the deep trench, and fill an undoped polysilicon layer into the deep trench to complete the fabrication process of DRAM deep trench capacitor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I508224-B |
| priorityDate | 2001-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.