http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-468274-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
filingDate 2000-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff4f67e06775bbeb8e5ce0ea051199fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50ba6e61d0dd9b4644b8cd795d3fe56c
publicationDate 2001-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-468274-B
titleOfInvention Manufacturing method of bottom storage node
abstract The present invention provides a kind of method for manufacturing bottom storage node, in which the manufacturing method contains the followings: (1) providing a substrate, in which at least one of the first conducting layer is contained on the substrate surface; (2) forming a dielectric layer on the substrate to completely cover the conducting layer; (3) forming a contact hole in the dielectric layer to reach the conducting layer; (4) forming the second conducting layer on the dielectric layer surface so as to fill up the contact hole; (5) sequentially forming a metal silicide layer and the third conducting layer on the second conducting layer; (6) forming a patterned photoresist layer on the surface of the third conducting layer so as to define the pattern and position of the bottom storage node; (7) etching the third conducting layer, the metal silicide layer and the second conducting layer, which are not covered by the photoresist layer, until reaching the dielectric layer surface; (8) removing the photoresist layer; and (9) wet etching the metal silicide layer to complete the manufacture of fin-shaped bottom storage node.
priorityDate 2000-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.