http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-468241-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2000-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70190b5a5fb9ff3ba85ff62c810a637b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_024c6103e59bcd98ab3dff9039668c49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6854bdfb96ee59ee9bb95fdb5c39300f |
| publicationDate | 2001-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-468241-B |
| titleOfInvention | Method to improve adhesion of dielectric material of semiconductor |
| abstract | This invention provides a method to improve adhesion of dielectric material of semiconductor. A barrier layer is formed onto a given substrate. An adhesion promoter is deposited onto the barrier layer to form the first middle layer by using chemical vapor deposition, in which the adhesion promoter is an organic material such as methyl triacetoxy silane (MTAS). A first dielectric layer is formed onto the middle layer. The adhesion promoter is once again deposited onto the first dielectric layer to form the second middle layer by using chemical vapor deposition. An etching stop layer is formed on top of the second middle layer. The adhesion promoter is deposited onto the etching stop layer to form the third middle layer by using chemical vapor deposition. Then, a second dielectric layer is formed onto the third middle layer. |
| priorityDate | 2000-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.