http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-466768-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_628db03ba4f8948ecd211fb3d46b9ef4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7785 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 |
| filingDate | 2000-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70e5c31e7b07e21098bcf44e00d840e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_565bcd467b16de28be3ceb7d11c21742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07894c3e9ec2a9cd23551f84d1eab9f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8589a7208903f1e81f6f596891d5c663 |
| publicationDate | 2001-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-466768-B |
| titleOfInvention | An In0.34Al0.66As0.85Sb0.15/InP HFET utilizing InP channels |
| abstract | A double δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 μA/mm at Vgs=-40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V, respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The gds is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky later, and to the large conduction-band discontinuity (ΔEc) at the InAlAsSb/InP heterojunction. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I563659-B |
| priorityDate | 2000-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.