| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-908 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28017 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2000-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e521c67f04d9b79e7bc943be4862d8cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6abe332d0ef43f37918c5974833e31b3 |
| publicationDate |
2001-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-466755-B |
| titleOfInvention |
Manufacturing method of flash memory |
| abstract |
A manufacturing method of flash memory is disclosed. This method uses continuous single wafer processing to put a wafer in a CVD tool with multiple chambers and form the tunnel oxide, silicon nitride floating gate, inter-poly oxide and control gate. All the above-mentioned steps are performed without breaking vacuum and no clean process is required. |
| priorityDate |
2000-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |