| abstract |
In a fabrication process for semiconductor devices, there is a crystalline semiconductor film formed on a substrate, and the semiconductor film is an active layer of a transistor and is mainly composed of silicon. The method comprises an under-level protection layer fabrication step of forming a silicon oxide film as an under-level protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the under-level protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film; in which the semiconductor film is irradiated by a pulsed laser, and the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, by using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably. |